Ir2110 Mosfet Gate Driver Ic

Ir2112 mosfet igbt driver features.

Ir2110 mosfet gate driver ic.

It has a floating circuit to handle to bootstrap operation. It can tolerate negative transient voltage. Power mosfet models figure 2c is the switching model of the mosfet. The ir2110 is a high voltage high speed power mosfet and igbt driver with independent high and low side referenced output channels.

By using a single ic a half bridge circuit can be operated in which one mosfet is in high side configuration and another one is in the low side configuration. It has a feature of floating channel which can perform bootstrap operation. Operating supply voltage range for ir2110 is 10 to 20 volt and output current is 2 5a. The ir2110 ic is one of the high speed and high voltage gate driver ics for igbt and power mosfet.

In h bridge used in pure sine wave inverter design 2 mosfet are used as high side mosfet and 2 mosfet is used as low side mosfet. R ds on also directly affects power dissipation internal to the driver. The most important parasitic components that influences switching performance are shown in this model. By apogeeweb ir2110 2110 ir2110 datasheet ir2110 pinout ir2110 circuit mosfet driver igbt driver.

Ir2110 comes in 14 pin through hole pdip package and the 16 pin surface mount soic package. Their respective roles are discussed in section 2 3 which is dedicated to the switching procedure of the device. The ic is having independent low and high side output channel. Eicedriver 2edl is a 600v half bridge gate driver ic family basing on level shifter soi silicon on insulator technology which integrates low ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

500 v high side and low side gate driver ic with shutdown. High and low side driver ic with source current 0 25 a and sink current 0 5 a. The use of ir2110 gate driver ic has also been discussed in the same tutorial. International rectifiers ir2110 mosfet driver can be used as a high side and low side mosfet driver.

For a specific drive current the lower value of r ds on allows higher r ext to be used. Ir2210 can withstand voltage up to 500v offset voltage. Fundamentals of mosfet and igbt gate driver circuits figure 2. Rc circuit model for a gate driver with mosfet output stage and power device as a capacitor.